The device has good amplifying factor and also the gain is almost linear making 2N3055 one of best solution for power amplifiers.Īs mentioned earlier the 2N3055 can be used for any NPN transistor applications but for understanding the functioning of device let us consider a simple application circuit as shown below. 2N3055 is one of the basic transistors available in the market for cheap and with features being suited for many applications.ĢN3055 is also used in audio power amplifiers. Operating temperature range: -65✬ to +200✬ĢN6673, 2N6675, complementary pair- MJ2955ĢN3055 is preferred when you want a simple switching device for medium power loads.Maximum voltage across collector and base: 100V DC.Maximum current allowed through base: 7A DC.Maximum voltage across base and emitter: 7V DC.Maximum current allowed trough collector: 15A DC.Maximum voltage across collector and emitter: 60V DC.Low collector-emitter saturation voltage.Normally used as trigger to turn ON the transistor The pin configuration of 2N3055 is given below. Like any other transistor 2N3055 has three pins namely EMITTER, BASE and COLLECTOR. The device is designed for general purpose switching and amplifier applications. All ST products are sold pursuant to ST’s terms and conditions of sale.2N3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. MJ2955 Information in this document is provided solely in connection with ST products. Document revision history Date Revision 1 2 6 Content reworked to improve readability, no technical changes 2N3055 MJ2955 Changes. Revision history 4 Revision history Table 4. ECOPACK specifications are available at: 4/7 2N3055 MJ2955. The maximum ratings related to soldering conditions are also marked on the inner box label. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. These packages have a Lead-free second level interconnect. Symbol Parameter Collector cut-off current I CEX ( Collector cut-off current I CEO ( Emitter cut-off current I EBO ( Collector-emitter sustaining (1) V CEO(sus) voltage ( Collector-emitter sustaining ( 100 Ω) CER(sus) voltage (R BE Collector-emitter saturation. MJ2955 2 Electrical characteristics (T = 25☌ unless otherwise specified) case Electrical characteristics Table 3. operating junction temperature J Note: For PNP type voltage and current values are negative 2/7 Parameter = 100 Ω ≤ 25☌ c 2N3055 MJ2955 Value Unit NPN 2N3055 PNP MJ2955 100 115 -65 to 200 200 ☌. P Total dissipation at T TOT T Storage temperature stg T Max. Marking Package 2N3055 TO-3 MJ2955 Rev 7 2N3055 MJ2955 1 2 TO-3 Internal schematic diagram Packaging tray 1/7 7. Complementary power transistors Figure 1.
2N3055 TRANSISTOR DATASHEET EXPLORED CODE
Device summary Order code 2N3055 MJ2955 January 2008.
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